Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

被引：4
|
作者：
Li, Xuefei [1 ,2 ]
Xiong, Xiong [1 ,3 ]
Wu, Yanqing [1 ,2 ,3 ]
机构：
[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Elect & Elect Engn, Wuhan 430074, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
来源：
CHINESE PHYSICS B | 2017年 / 26卷 / 03期
基金：
中国国家自然科学基金;
关键词：
black phosphorus; transistors; mobility; photodetector; FIELD-EFFECT TRANSISTORS; TRANSPORT-PROPERTIES; 2D SEMICONDUCTOR; GRAPHENE; PHOTODETECTORS; PASSIVATION; CIRCUITS; HETEROSTRUCTURE; PHOTOOXIDATION; GENERATION;
D O I：
10.1088/1674-1056/26/3/037307
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for electronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stability, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.
引用
收藏
页数：11
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