Storage performance of X-ray irradiated doped CsBr

被引：45

作者：

Hackenschmied, P

Zeitler, G

Batentschuk, M

Winnacker, A

Schmitt, B

Fuchs, M

Hell, E

Knüpfer, W

机构：

[1] Univ Erlangen Nurnberg, Inst Mat Sci 6, D-91058 Erlangen, Germany

[2] Siemens AG, Med Solut, Vacuum Technol, D-91058 Erlangen, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 191卷

关键词：

X-ray storage phosphors; photostimulated luminescence; second phase formation; CsBr; Eu;

D O I：

10.1016/S0168-583X(02)00544-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper we study the storage properties of CsBr:Eu2+ including storage efficiency, speed of read-out, physical mechanism as well as preparation conditions. The nature of the storage centers is discussed. Formation of a second phase related to the presence of the Eu dopant seems to play an important role in the hole stabilisation. (C) 2002 Published by Elsevier Science B.V.

引用

页码：163 / 167

页数：5

共 14 条

[1] Photostimulation redshift for nonstoichiometric Ba1-xSrxFBr:Eu2+ [J].