共 8 条
A CMOS Terahertz Linear Array with Ultra-Wideband Detectors
被引:2
作者:

Cai, Zi-teng
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机构:
Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

Liu, Min
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h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Super Lattices & Microstruct, Beijing, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

Liu, Li-Yuan
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h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Super Lattices & Microstruct, Beijing, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

Liu, Jian
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h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Super Lattices & Microstruct, Beijing, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

Wu, Nan-jian
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h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Super Lattices & Microstruct, Beijing, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
机构:
[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Super Lattices & Microstruct, Beijing, Peoples R China
来源:
2022 15TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT)
|
2022年
基金:
美国国家科学基金会;
关键词:
CMOS;
terahertz detector;
field-effect transistor;
patch antenna;
D O I:
10.1109/UCMMT56896.2022.9994840
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents an ultra-wideband detector linear array for 4THz band. The FET-based detectors coupled with antenna are strictly designed in 65nm CMOS technology. The current response is analyzed with non-quasi state and nonlinear transistor model. Simulated return loss demonstrate the -3dB bandwidth of the antenna is from 3.6 to 5THz. The CMOS integrated linear array demonstrates a promising application in high-resolution terahertz spectrometer and imaging fields.
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收藏
页码:5 / 7
页数:3
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