Current conduction models in the high temperature single-electron transistor

被引：11

作者：

Dubuc, Christian ^{[1
]}

Beaumont, Arnaud ^{[1
]}

Beauvais, Jacques ^{[1
]}

Drouin, Dominique ^{[1
]}

机构：

[1] Univ Sherbrooke, Dept Genie Elect, Sherbrooke, PQ J1K 2R1, Canada

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 05期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Single-electron transistor; Device modeling; Electrical characterization; Thermionic emission; Direct tunneling; Junction resistance; DEVICES; FILMS;

D O I：

10.1016/j.sse.2009.03.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-electron transistor drain current is studied as a function of the temperature. A current conduction model based on the physical properties of the tunnel junctions is proposed to explain the discrepancies observed at high temperature between the experimental data and Monte Carlo simulations. The extension of the model includes a thermionic and a field assisted emission component. A demonstration of this approach is presented for a metallic single-electron transistor characterized up to 430 K. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：478 / 482

页数：5

共 20 条

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