Reconstruction of the charge collection probability in a semiconductor device from the derivative of collection efficiency data

被引：8

作者：

Donolato, C ^{[1
]}

机构：

[1] CNR, Ist Chim & Tecnol Mat & Componenti Elettron, LAMEL, I-40129 Bologna, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期

关键词：

D O I：

10.1063/1.125530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is presented for analyzing the charge collection efficiency data that are obtained by irradiating a semiconductor device with an electron beam at different energies, and measuring the induced current. The procedure uses the numerical derivative of the function R eta(R) (eta is the collection efficiency and R the electron range), and allows a direct reconstruction of the depth distribution of the charge collection probability in the device. Examples of application of the method to simulated data and published measurements are described. (C) 1999 American Institute of Physics. [S0003-6951(99)01351-0].

引用

页码：4004 / 4006

页数：3

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