Effect of Al doping on the retention behavior of memories HfO2 resistive switching

被引：54

作者：

Frascaroli, Jacopo ^{[1
,2
]}

Volpe, Flavio Giovanni ^{[1
]}

Brivio, Stefano ^{[1
]}

Spiga, Sabina ^{[1
]}

机构：

[1] CNR, IMM, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[2] Univ Milan, Dept Phys, Milan, Italy

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

关键词：

RRAM; Hafnium oxide; Aluminum; Doping; Retention; FILMS;

D O I：

10.1016/j.mee.2015.04.043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The retention behavior of HfO2-based resistive switching memory cells (REAM) is characterized as a function of Al doping concentration, which was previously reported to be a viable method for the improvement of the switching uniformity. While the low resistance state (LRS) does not exhibit any major variation up to 10(6) s for all the tested devices, two retention loss mechanisms can be identified for the high resistance state (HRS). The main HRS trend follows a temperature-activated gradual decrease of the resistance, which also depends on the doping concentration. In addition, tail bits of the population distribution show a very fast retention loss process that strongly depends on the doping concentration. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：104 / 107

页数：4

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