Effect of Al doping on the retention behavior of memories HfO2 resistive switching

被引：54

作者：

Frascaroli, Jacopo ^{[1
,2
]}

Volpe, Flavio Giovanni ^{[1
]}

Brivio, Stefano ^{[1
]}

Spiga, Sabina ^{[1
]}

机构：

[1] CNR, IMM, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[2] Univ Milan, Dept Phys, Milan, Italy

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

关键词：

RRAM; Hafnium oxide; Aluminum; Doping; Retention; FILMS;

D O I：

10.1016/j.mee.2015.04.043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The retention behavior of HfO2-based resistive switching memory cells (REAM) is characterized as a function of Al doping concentration, which was previously reported to be a viable method for the improvement of the switching uniformity. While the low resistance state (LRS) does not exhibit any major variation up to 10(6) s for all the tested devices, two retention loss mechanisms can be identified for the high resistance state (HRS). The main HRS trend follows a temperature-activated gradual decrease of the resistance, which also depends on the doping concentration. In addition, tail bits of the population distribution show a very fast retention loss process that strongly depends on the doping concentration. (C) 2015 Elsevier B.V. All rights reserved.

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收藏

页码：104 / 107

页数：4

相关论文

共 24 条

[1] Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability [J].

Ambrogio, Stefano ;

Balatti, Simone ;

Cubeta, Antonio ;

Calderoni, Alessandro ;

Ramaswamy, Nirmal ;

Ielmini, Daniele .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) :2912-2919

[2] Formation and disruption of conductive filaments in a HfO2/TiN structure [J].

Brivio, S. ;

Tallarida, G. ;

Cianci, E. ;

Spiga, S. .

NANOTECHNOLOGY, 2014, 25 (38)

[3] Molecular dynamics simulation of amorphous HfO2 for resistive RAM applications [J].

Broglia, G. ;

Ori, G. ;

Larcher, L. ;

Montorsi, M. .

MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2014, 22 (06)

[4] Phase Stabilization of Al:HfO2 Grown on InxGal1-xAs Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition [J].

Cianci, Elena ;

Molle, Alessandro ;

Lamperti, Alessio ;

Wiemer, Claudia ;

Spiga, Sabina ;

Fanciulli, Marco .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (05) :3455-3461

[5] First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism [J].

Clima, S. ;

Chen, Y. Y. ;

Degraeve, R. ;

Mees, M. ;

Sankaran, K. ;

Govoreanu, B. ;

Jurczak, M. ;

De Gendt, S. ;

Pourtois, G. .

APPLIED PHYSICS LETTERS, 2012, 100 (13)

[6] Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory [J].

Congedo, Gabriele ;

Wiemer, Claudia ;

Lamperti, Alessio ;

Cianci, Elena ;

Molle, Alessandro ;

Volpe, Flavio G. ;

Spiga, Sabina .

THIN SOLID FILMS, 2013, 533 :9-14

[7] Mechanism of interstitial oxygen diffusion in hafnia [J].

Foster, AS ;

Shluger, AL ;

Nieminen, RM .

PHYSICAL REVIEW LETTERS, 2002, 89 (22) :225901-225901

[8] Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly [J].

Frascaroli, Jacopo ;

Brivio, Stefano ;

Ferrarese Lupi, Federico ;

Seguini, Gabriele ;

Boarino, Luca ;

Perego, Michele ;

Spiga, Sabina .

ACS NANO, 2015, 9 (03) :2518-2529

[9]

Gao B, 2009, 2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P30

[10] Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory [J].

Gao, Bin ;

Zhang, Haowei ;

Chen, Bing ;

Liu, Lifeng ;

Liu, Xiaoyan ;

Han, Ruqi ;

Kang, Jinfeng ;

Fang, Zheng ;

Yu, Hongyu ;

Yu, Bin ;

Kwong, Dim-Lee .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) :276-278