Characterisation of a soft X-ray optimised CMOS Image Sensor

被引：12

作者：

Heymes, J. ^{[1
,2
]}

Ivory, J. ^{[1
]}

Stefanov, K. ^{[1
]}

Buggey, T. ^{[1
]}

Hetherington, O. ^{[1
]}

Soman, M. ^{[1
,3
]}

Holland, A. ^{[1
]}

机构：

[1] Open Univ, Ctr Elect Imaging, Walton Hall, Milton Keynes MK7 6AA, Bucks, England

[2] Paul Scherrer Inst, Villigen, Switzerland

[3] ESA, ESTEC, Noordwijk, Netherlands

来源：

JOURNAL OF INSTRUMENTATION | 2022年 / 17卷 / 05期

关键词：

X-ray detectors; Photon detectors for UV; visible and IR photons (solid-state);

D O I：

10.1088/1748-0221/17/05/P05003

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A prototype CMOS Image Sensor optimised for soft X-ray applications has been designed by the Centre for Electronic Imaging in partnership with Teledyne-e2v. The device features four different pixel variants (three variants of 40 mu m pitch pixels, and one variant of 10 mu m pixels) each covering a quarter of the 2 x 2 cm(2) image area. The pixel designs feature fully depleted pinned photodiodes using reverse substrate bias and have been optimised for low noise operation, high responsivity and low image lag. The fabricated front-illuminated devices have been tested in a custom-built vacuum test setup at operating temperatures between -30 degrees C and -40 degrees C. The sensors feature less than 5 e(-) RMS readout noise and energy resolution of 142 eV at Mn-K alpha (5.9 keV). The response to soft X-ray with different sensor parameters (e.g. pixel pitch, deep-depletion extension implant depth, and back-bias voltage) is also studied.

引用

页数：18

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