Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy

被引：12

作者：

Zhang, Z ^{[1
]}

Kulakov, MA ^{[1
]}

Bullemer, B ^{[1
]}

Eisele, I ^{[1
]}

Zotov, AV ^{[1
]}

机构：

[1] INST AUTOMAT & CONTROL PROC,VLADIVOSTOK 690041,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.117764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of extremely thin Si films (few monolayers) is studied by scanning tunneling microscopy. Using specific boron-induced surface features as an indication of the presence of boron on the surface, boron segregation to the surface is tested both in solid phase epitaxy and molecular beam epitaxy regimes. The results show that under appropriate conditions there is no indication on baron segregation even on atomic scale. (C) 1996 American Institute of Physics.

引用

页码：494 / 496

页数：3

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