Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy

被引：287

作者：

Tian, Zhen ^{[1
,2
,3
]}

Guo, Chenglei ^{[1
,2
,3
]}

Zhao, Mingxing ^{[2
,3
]}

Li, Ranran ^{[2
,3
]}

Xue, Jiamin ^{[1
,2
,3
,4
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Chinese Acad Sci, Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China

来源：

ACS NANO | 2017年 / 11卷 / 02期

基金：

中国国家自然科学基金;

关键词：

2D SnS; anisotropic electronic transport; field-effect transistor; BLACK PHOSPHORUS; 2D SEMICONDUCTOR; GRAPHENE; MODES; FILM; GAP;

D O I：

10.1021/acsnano.6b08704

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross Hall-bar structure are fabricated. They show heavily hole-doped (similar to 10(19) cm(-3)) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm(2) V-1 s(-1), which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be similar to 45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity.

引用

页码：2219 / 2226

页数：8

共 48 条

[1] INVESTIGATIONS ON SNS [J].