Universal process modeling with VTRE for OPC

被引:52
作者
Granik, Y [1 ]
Cobb, N [1 ]
Do, T [1 ]
机构
[1] Mentor Graph Corp, San Jose, CA 95131 USA
来源
OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2 | 2002年 / 4691卷
关键词
D O I
10.1117/12.474587
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In the previous work, Cobb and Zakhor (SPIE, 2726, pp.208-222, 1996) introduced the VTR (Variable Threshold Resist) model and demonstrated its accuracy for fitting empirical data for 365 nm illumination (SPIE, 305 1, pp. 458-468, 1997). The original work showed how EPE can be modeled as a function of a peak local image intensity and the slope of the adjacent cutline. Since then, authors such as J. Randall, et al, (Microel. Engineering, 46, pp. 59-63, 1999) have analyzed the VTR model including other parameters such as dose. In the current approach, the original VTR has been enhanced to the VTR-Enhanced (or VTRE) in 1999, and VT-5 models in 2002, for production in OPC applications, which include other image intensity parameters.
引用
收藏
页码:377 / 394
页数:18
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