Universal process modeling with VTRE for OPC

被引:52
作者
Granik, Y [1 ]
Cobb, N [1 ]
Do, T [1 ]
机构
[1] Mentor Graph Corp, San Jose, CA 95131 USA
来源
OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2 | 2002年 / 4691卷
关键词
D O I
10.1117/12.474587
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In the previous work, Cobb and Zakhor (SPIE, 2726, pp.208-222, 1996) introduced the VTR (Variable Threshold Resist) model and demonstrated its accuracy for fitting empirical data for 365 nm illumination (SPIE, 305 1, pp. 458-468, 1997). The original work showed how EPE can be modeled as a function of a peak local image intensity and the slope of the adjacent cutline. Since then, authors such as J. Randall, et al, (Microel. Engineering, 46, pp. 59-63, 1999) have analyzed the VTR model including other parameters such as dose. In the current approach, the original VTR has been enhanced to the VTR-Enhanced (or VTRE) in 1999, and VT-5 models in 2002, for production in OPC applications, which include other image intensity parameters.
引用
收藏
页码:377 / 394
页数:18
相关论文
共 17 条
  • [1] Approximate models for resist processing effects
    Brunner, TA
    Ferguson, RA
    [J]. OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 : 198 - 207
  • [2] Experimental results on optical proximity correction with variable threshold resist model
    Cobb, N
    Zakhor, A
    [J]. OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 458 - 468
  • [3] Mathematical and CAD framework for proximity correction
    Cobb, N
    Zakhor, A
    Miloslavsky, E
    [J]. OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 : 208 - 222
  • [4] CONRAD EW, 2000, MODEL CONSIDERATIONS
  • [5] Dolainsky C, 1998, P SOC PHOTO-OPT INS, V3236, P202
  • [6] GRANIK Y, 2001, SPIE, V4346, P98
  • [7] GRANIK Y, 2000, 17 VMIC C P, P249
  • [8] LI J, 1997, SPIE, V2726, P643
  • [9] Variable threshold optical proximity correction (OPC) models for high performance 0.18 μm process
    Liao, HM
    Palmer, S
    Sadra, K
    [J]. OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1033 - 1040
  • [10] MACK CA, 1994, P SOC PHOTO-OPT INS, V2197, P501, DOI 10.1117/12.175444