Moire-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers

被引：21
|
作者：
Summerfield, Alex [1 ]
Kozikov, Aleksey [2 ,3 ]
Cheng, Tin S. [1 ]
Davies, Andrew [1 ,4 ]
Cho, Yong-Jin [1 ]
Khlobystov, Andrei N. [4 ,5 ]
Mellor, Christopher J. [1 ]
Foxon, C. Thomas [1 ]
Watanabe, Kenji [6 ]
Taniguchi, Takashi [6 ]
Eaves, Laurence [1 ]
Novoselov, Kostya S. [2 ,3 ]
Novikov, Sergei V. [1 ]
Beton, Peter H. [1 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Manchester, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England
[3] Univ Manchester, Natl Graphene Inst, Oxford Rd, Manchester M13 9PL, Lancs, England
[4] Univ Nottingham, Sch Chem, Nottingham NG7 2RD, England
[5] Univ Nottingham, Nottingham Nanoscale & Microscale Res Ctr, Nottingham NG7 2RD, England
[6] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
来源：
NANO LETTERS | 2018年 / 18卷 / 07期
基金：
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词：
Boron nitride; epitaxy; growth; tunneling; superlattice; moire; heterostructure; EPITAXIAL GRAPHENE; DIRAC FERMIONS;
D O I：
10.1021/acs.nanolett.8b01223
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moire patterns in the spatial maps of their tunnel conductance consistent with the formation of a moire superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moire superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes.
引用
收藏
页码：4241 / 4246
页数：6
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