Transitions between vortex and transverse walls in NiFe nano-structures

被引:6
作者
Bance, Simon [1 ]
Schrefl, Thomas
Hrkac, Gino
Suess, Dieter
Brownlie, Craig
McVitie, Stephen
Chapman, John N.
Allwood, Dan A.
机构
[1] Univ Sheffield, Dept Engn Mat, Sheffield S1 3JD, S Yorkshire, England
[2] Vienna Tech Univ, Inst Solid State Phys, A-1040 Vienna, Austria
[3] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
基金
奥地利科学基金会;
关键词
domain wall transitions; domain wall traps; magnetic random access memory (MRAM); memory elements;
D O I
10.1109/TMAG.2006.878393
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates the possible transitions between transverse and vortex type domain walls in magnetic domain wall trap memory elements, induced by a rotating magnetic field. A phase relation is shown to exist relating the final domain wall configuration to the field strength and field rotation frequency. Thus, it is possible to controllably switch from a transverse domain wall to either a clockwise or counterclockwise one.
引用
收藏
页码:2966 / 2968
页数:3
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