Transparent AIN layers formed by metal plasma immersion ion implantation and deposition

被引:4
|
作者
Mändl, S [1 ]
Manova, D [1 ]
Rauschenbach, B [1 ]
机构
[1] Leipniz Inst Oberflachenmodifizierung, D-04303 Leipzig, Germany
来源
SURFACE & COATINGS TECHNOLOGY | 2004年 / 186卷 / 1-2期
关键词
AIN; ERDA; IR-spectroscopy; spectroscopic ellipsometry;
D O I
10.1016/j.surfcoat.2004.04.017
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Aluminum nitride is a very attractive semiconductor material, suitable for UV optoelectronics due to its large band gap. The influence of the ion bombardment during energetic deposition with metal plasma immersion ion implantation and deposition (MePIIID) on the defect structure and hence the optical properties is investigated for a pulse voltage between 0 and 5 kV at a duty cycle of 9%. With increasing voltage, anti-site defects are decreasing. However, secondary effects as increased oxygen adsorption and oxygen complex formation suggest that the simultaneous heating of the sample by the incoming ions is responsible for this effect and ions even at 5 keV might produce more damage than they remove. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:82 / 87
页数:6
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