Sputtered TiO2-sapphire temperature compensated resonator oscillator

被引：0
|
作者：
Kersale, Y.
Boubekeur, N.
Chaubet, M.
Garcon, L.
Bazin, N.
Giordano, V.
机构：
[1] Univ Franche Comte, CNRS, UMR 6174, Inst FEMTOST,Dept LPMO, F-25044 Besancon, France
[2] Ctr Natl Etud Spatiales, F-31055 Toulouse 4, France
[3] ACM, F-78640 Villiers St Frederic, France
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 18期
关键词：
D O I：
10.1049/el:20061961
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characterisation of a new microwave temperature compensated sapphire-rutile resonator oscillator is reported. The oscillator frequency instability performances are better than 2 x 10(-13) for tau < 1000 s, and the frequency drift is estimated at 2.5 x 10(-12)/day. These medium- and long-term results constitute, to date, the state-of-the-art for microwave temperature compensated sapphire resonator oscillators.
引用
收藏
页码：1042 / 1043
页数：2
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