Uncooled photodetectors for the 3-5 μm spectral range based on III-V heterojunctions

被引:35
作者
Krier, A. [1 ]
Suleiman, W. [1 ]
机构
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
基金
英国工程与自然科学研究理事会;
关键词
10;
D O I
10.1063/1.2337995
中图分类号
O59 [应用物理学];
学科分类号
摘要
The design, fabrication, and characterization of heterojunction photodiodes for room temperature operation in the mid-infrared (3-5 mu m) spectral range is described. Devices appropriate for carbon dioxide detection have been developed and studied. The authors report on the improvements obtained by increasing buffer layer thickness and also by using a blocking barrier to reduce leakage current. (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 10 条
[1]   A HETEROJUNCTION MINORITY-CARRIER BARRIER FOR INSB DEVICES [J].
ASHLEY, T ;
DEAN, AB ;
ELLIOTT, CT ;
JOHNSON, AD ;
PRYCE, GJ ;
WHITE, AM ;
WHITEHOUSE, CR .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S386-S389
[2]   Optoelectronic properties of photodiodes for the mid- and far-infrared based on the InAs/GaSb/AlSb materials family [J].
Fuchs, F ;
Bürkle, L ;
Hamid, R ;
Herres, N ;
Pletschen, W ;
Sah, RE ;
Kiefer, R ;
Schmitz, J .
PHOTODETECTORS: MATERIALS AND DEVICES VI, 2001, 4288 :171-182
[3]   Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm [J].
Gao, HH ;
Krier, A ;
Sherstnev, VV .
APPLIED PHYSICS LETTERS, 2000, 77 (06) :872-874
[4]   A room temperature photovoltaic detector for the mid-infrared (1.8-3.4 μm) wavelength region [J].
Krier, A ;
Gao, HH ;
Mao, Y .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (08) :950-956
[5]   GAAS ON SI AND RELATED SYSTEMS - PROBLEMS AND PROSPECTS [J].
KROEMER, H ;
LIU, TY ;
PETROFF, PM .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :96-102
[6]   THE THEORY OF DYNAMIC ANNIHILATION OF DISLOCATIONS [J].
KUSOV, AA ;
VLADIMIROV, VI .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 138 (01) :135-142
[7]   LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF INASSB GROWN ON GASB SUBSTRATES FROM ANTIMONY SOLUTION [J].
MAO, Y ;
KRIER, A .
JOURNAL OF CRYSTAL GROWTH, 1993, 133 (1-2) :108-116
[8]  
Martisov M. Yu., 1990, Soviet Physics - Solid State, V32, P1101
[9]   Near room temperature operation of a highly strained short wavelength (2.1 μm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP [J].
Mohamed, A. H. ;
Missous, M. ;
Lai, K. T. ;
Haywood, S. K. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (06) :813-817
[10]   Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers [J].
Speck, JS ;
Brewer, MA ;
Beltz, G ;
Romanov, AE ;
Pompe, W .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :3808-3816