Effect of annealing process on structures and ferroelectric properties of Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 thin films

被引：1

作者：

Fan Suhua ^{[1
]}

Zhang Wei ^{[1
]}

Wang Peiji ^{[2
]}

Zhang Fengqing ^{[1
]}

Feng Bokai ^{[1
]}

机构：

[1] Shandong Jianzhu Univ, Dept Mat Sci & Engn, Jinan 250101, Peoples R China

[2] Jinan Univ, Dept Sci, Jinan 250022, Peoples R China

来源：

JOURNAL OF RARE EARTHS | 2009年 / 27卷 / 02期

关键词：

Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 thin films; annealing process; ferroelectric properties; rare earths; BISMUTH; MICROSTRUCTURE; PT/TI/SIO2/SI;

D O I：

10.1016/S1002-0721(08)60222-7

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 (C0.4S0.6BNT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process (time and temperature) on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of (200) peak increased first their decreased with annealing temperature and became predominant at 800 degrees C. In contrast, no evident change could be observed in the (001) peak. The remnant polarization (P-r) and coercive field (E-c) for C0.4S0.6BNT film annealed at 800 degrees C for 5 min were 21.6 mu C/cm(2) and 68.3 kV/cm, respectively.

引用

页码：216 / 221

页数：6

共 24 条

[1]

ARAUJO C, 1995, NATURE, V374, P27

[2] The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films [J].

Chen, TC ;

Li, TK ;

Zhang, XB ;

Desu, SB .

JOURNAL OF MATERIALS RESEARCH, 1997, 12 (06) :1569-1575

[3] Layered perovskites with giant spontaneous polarizations for nonvolatile memories [J].

Chon, U ;

Jang, HM ;

Kim, MG ;

Chang, CH .

PHYSICAL REVIEW LETTERS, 2002, 89 (08) :1-087601

[4] Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate [J].

Chon, U ;

Shim, JS ;

Jang, HM .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4769-4775

[5]

Fan Suhua, 2008, Journal of the Chinese Ceramic Society, V36, P237

[6] Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film:: Influence of the sol-gel process and the substrate [J].

Floquet, N ;

Hector, J ;

Gaucher, P .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3815-3826

[7] Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi4-xNdxTi3O12 films [J].

Garg, A ;

Barber, ZH ;

Dawber, M ;

Scott, JF ;

Snedden, A ;

Lightfoot, P .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2414-2416

[8] Chemical solution processing and properties of (Bi,Nd)4Ti3O12 ferroelectric thin films [J].

Hayashi, T ;

Iizawa, N ;

Togawa, D ;

Yamada, M ;

Sakamoto, W ;

Hirano, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4A) :1660-1664

[9] Orientation dependence of ferroelectric and piezoelectric properties of Bi3.15Nd0.85Ti3O12 thin films on Pt(100)/TiO2/SiO2/Si substrates [J].

Hu, G. D. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)

[10] Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes [J].

Hu, GD ;

Wilson, IH ;

Xu, JB ;

Li, CP ;

Wong, SP .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1758-1760

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