Dimeric SFX host materials for red, green and blue phosphorescent organic light-emitting devices

被引:15
|
作者
Sun, Ming-Li [1 ,2 ]
Yue, Shou-Zhen [3 ]
Lin, Jun-Rui [1 ,2 ]
Ou, Chang-Jin [1 ,2 ]
Qian, Yan [1 ,2 ]
Zhang, Yang [1 ,2 ]
Li, Yan [1 ,2 ]
Wei, Qi [1 ,2 ]
Zhao, Yi [3 ]
Xie, Ling-Hai [1 ,2 ]
Huang, Wei [1 ,2 ,4 ]
机构
[1] Nanjing Univ Posts & Telecommun, Ctr Mol Syst & Organ Devices, Key Lab Organ Elect & Informat Displays, Nanjing, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Inst Adv Mat, Nanjing, Jiangsu, Peoples R China
[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
[4] Nanjing Tech Univ, Inst Adv Mat, Jiangsu Singapore Joint Res Ctr Organ Bioelect &, Nanjing, Jiangsu, Peoples R China
基金
国家教育部博士点专项基金资助; 中国国家自然科学基金;
关键词
Organic light-emitting diode; Electrophosphorescence; Host materials; Spiro[fluorene-9,9 '-xanthene; Conformational isomers; HIGH-TRIPLET-ENERGY; PHOSPHINE OXIDE HOSTS; INTERMOLECULAR PI-PI; EFFICIENCY ROLL-OFF; LOW DRIVING VOLTAGE; HIGHLY-EFFICIENT; BIPOLAR HOST; ELECTROPHOSPHORESCENT DEVICES; DIODES; OLEDS;
D O I
10.1016/j.synthmet.2014.06.022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two novel spiro[fluorene-9,9'-xanthene]-based derivatives 23'ODSFX and 3'3'ODSFX, without possessing conventional hole- or electron-transporting units, have been synthesized by a simple reaction procedure and been demonstrated to be host materials for efficient and low-voltage blue, green and red phosphorescent organic light-emitting devices (PHOLEDs). They showed good thermal stability with high glass transition temperatures (T-g) at 210 degrees C for 23'ODSFX and 138 degrees C for 3'3'ODSFX Compared with SFX-based devices, the performance of 23'ODSFX-based devices increased nearly 20 times, although the difference of HOMO/LUMO levels and triplet levels between dimeric SFX and SFX was very small. The blue PHOLEDs based on 23'ODSFX and 3/3/ODSFX exhibited the same low turn-on voltage of similar to 2.6V, and maximum current efficiency (CE) of 21.7/12.9 cd cd A(-1), power efficiency (PE) of 19.5/11.5 lm W-1, and external quantum efficiency (EQE) of 11.9%/7.2%, respectively. It was evident that the different position linkage in host materials was closely relative to the device performance. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:321 / 327
页数:7
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