Upper yield stress of Si crystals at high temperatures

被引：25

作者：

Yonenaga, I

机构：

[1] Institute for Materials Research, Tohoku University

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 08期

关键词：

D O I：

10.1149/1.1837021

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The temperature dependence of the upper yield stress in dislocation-free Czochralski-grown silicon (CZ-Si) and float-zone-grown silicon (FZ-Si) crystals and an FZ-SI crystal of grown-in dislocations oi 2 x 10(4) cm(-2) were obtained at temperatures close to the melting point. The result is compared with those reported at lower temperatures to provide a fundamental knowledge for wafer processing and crystal growth.

引用

页码：L176 / L178

页数：3

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