In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs

被引：30

作者：

Kim, Kyung Tae ^{[1
]}

Kim, Jaekyun ^{[1
]}

Kim, Yong-Hoon ^{[2
]}

Park, Sung Kyu ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Metallic capping layer; transparent capping; indium-gallium-zinc oxide; solution process; high mobility;

D O I：

10.1109/LED.2014.2329955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transparent and highly conductive indium-zinc oxide (IZO) was utilized as a metallic capping layer in solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to enhance their electrical performance. By applying an in-situ metallic oxide (IZO) as a capping layer, which can be monolithically patterned with source/drain electrodes, the IGZO TFTs have shown enhanced mobility as high as similar to 60 cm(2)/V-s, subthreshold slope of <0.1 V/decade, and threshold voltage of similar to 1-2 V. We found that metallic capping layers having work function lower than that of the channel material can induce a significant reduction in series resistance and enhance the apparent field-effect mobility of the device.

引用

页码：850 / 852

页数：3

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