Voltage-controlled emission wavelength switching in a pseudomorphic Si1-xGex/Si double quantum well

被引:3
作者
Yasuhara, N [1 ]
Fukatsu, S
机构
[1] Univ Tokyo, Grad Sch Arts & Sci, Tokyo 1538902, Japan
[2] PRESTO, Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期
关键词
pseudomorphic Si1-xGex/Si; quantum well; photoluminescence; voltage-controlled emission wavelength switch;
D O I
10.1143/JJAP.43.2073
中图分类号
O59 [应用物理学];
学科分类号
摘要
Voltage-controlled emission wavelength switching (VCEWS) is demonstrated in a pseudomorphic Si1-xGex/Si double quantum well (DQW). Under cw excitation, photoluminescence (PL) of the DQW was found to exhibit a clear switchover of emission wavelengths under longitudinal electric field, where an extinction ratio of more than 100 was obtained. In the time domain, antiphase oscillations of PL decays synchronized with the polarity switch of driving voltages were observed. The unique band line-up of pseudomorphic Si1-xGex/Si QWs which makes loosely bound electrons susceptible to longitudinal electric fields underlies the operation of VCEWS.
引用
收藏
页码:2073 / 2075
页数:3
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