Self-assembled Ge quantum dots on Si and their applications

被引：43
|
作者：
Wang, KL [1 ]
Liu, JL [1 ]
Jin, G [1 ]
机构：
[1] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 III期
基金：
美国国家科学基金会;
关键词：
molecular beam epitaxy; nanomaterials; semiconducting germanium;
D O I：
10.1016/S0022-0248(01)02212-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Ge quantum dots have been grown on Si by self-assembling in the Stranski-Krastanov growth mode using molecular beam epitaxy. The topics to be addressed are size Uniformity control and exact placement of dots. Possible device application discussions show that Ge quantum dots may be Used for mid-infrared photodetectors, lasers. resonant tunneling diodes, thermoelectric cooler, cellular automata, and quantum computer. etc. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：1892 / 1897
页数：6
相关论文
共 50 条
  • [1] Si/Ge self-assembled quantum dots for infrared applications
    Cusack, MA
    Briddon, PR
    North, SM
    Kitchin, MR
    Jaros, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (11) : L81 - L84
  • [2] Ge/Si self-assembled quantum dots and their optoelectronic device applications
    Wang, Kang L.
    Cha, Dongho
    Liu, Jianlin
    Chen, Christopher
    PROCEEDINGS OF THE IEEE, 2007, 95 (09) : 1866 - 1883
  • [3] Aspects of Ge/Si self-assembled quantum dots
    Boucaud, P
    Le Thanh, V
    Yam, V
    Sauvage, S
    Meneceur, N
    Elkurdi, M
    Débarre, D
    Bouchier, D
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 36 - 44
  • [4] Midinfrared photoconductivity in Ge/Si self-assembled quantum dots
    Boucaud, P
    Brunhes, T
    Sauvage, S
    Yam, N
    Le Thanh, V
    Bouchier, D
    Rappaport, N
    Finkman, E
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (01): : 233 - 236
  • [5] Intraband absorption in Ge/Si self-assembled quantum dots
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Brunhes, T
    Fortuna, F
    Debarre, D
    Bouchier, D
    SEMICONDUCTOR QUANTUM DOTS, 2000, 571 : 9 - 14
  • [6] Superlattices of self-assembled Ge/Si(001) quantum dots
    Le Thanh, V
    Yam, V
    APPLIED SURFACE SCIENCE, 2003, 212 : 296 - 304
  • [7] Intraband absorption in Ge/Si self-assembled quantum dots
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Débarre, D
    Bouchier, D
    APPLIED PHYSICS LETTERS, 1999, 74 (03) : 401 - 403
  • [8] Midinfrared photoconductivity of Ge/Si self-assembled quantum dots
    Rappaport, N
    Finkman, E
    Brunhes, T
    Boucaud, P
    Sauvage, S
    Yam, N
    Le Thanh, V
    Bouchier, D
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3224 - 3226
  • [9] Hydrogen passivation of self-assembled Ge/Si quantum dots
    Yakimov, A. I.
    Kirienko, V. V.
    Armbrister, V. A.
    Dvurechenskii, A. V.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (08)
  • [10] Coarsening of self-assembled Ge quantum dots on Si(001)
    Ross, FM
    Tersoff, J
    Tromp, RM
    PHYSICAL REVIEW LETTERS, 1998, 80 (05) : 984 - 987
12345