Characteristics of NbN/AlN/NbN tunnel junctions operating at 10 K

被引：13

作者：

Wang, Z ^{[1
]}

Terai, H ^{[1
]}

Kawakami, A ^{[1
]}

Uzawa, Y ^{[1
]}

机构：

[1] Kansai Adv Res Ctr, Commun Res Lab, Nishi Ku, Kobe, Hyogo 6512401, Japan

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1999年 / 12卷 / 11期

关键词：

D O I：

10.1088/0953-2048/12/11/352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NbN/AlN/NbN tunnel junctions and junction arrays were fabricated on single-crystal MgO and Si substrates for the basic investigation of all-NbN superconductor integrated circuits operating at 10 K. The electrical characteristics of single junctions and junction arrays were measured in a wide temperature range of 4.2-15 K. There is almost no recognizable difference in junction characteristics when the operating temperature is varied from 4.2 K to 10 K. The junctions demonstrated a very good junction quality with a high gap voltage (V-g = 4.8 mV), large IcRN products (IcRN = 2.5 mV) and a small subgap leakage current (R-sg/R-N = 6) at 10 K. NbN/AlN/NbN junction arrays were fabricated for estimating the nonuniformity of the junction parameters. I-c nonuniformity for a 200-junction array with a high current density (J(c) = 11 kA cm(-2)) was less than +/-2% (1 sigma).

引用

页码：868 / 870

页数：3

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