Image formation in extreme ultraviolet lithography and numerical aperture effects

被引：17

作者：

Bollepalli, SB ^{[1
]}

Khan, M ^{[1
]}

Cerrina, F ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53435 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.590941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of image formation in extreme ultraviolet lithography from the mask to the wafer is studied by physical modeling along with computer simulations. The reflective properties of multilayer mirrors and some of The demands that they impose upon the optical system design for accurate replication of mask patterns is discussed. Numerical aperture size effects in relation to the critical dimension at the wafer is presented along with several illustrative examples. (C) 1999 American Vacuum Society. [S0734-211X(99)18706-7].

引用

页码：2992 / 2997

页数：6

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