Bright CdSe quantum dot inserted in single ZnSe nanowires

被引：2

作者：

Tribu, A. ^{[1
]}

Sallen, G. ^{[2
]}

Aichele, T. ^{[1
]}

Bougerol, C. ^{[2
]}

Andre, R. ^{[2
]}

Poizat, J. P. ^{[2
]}

Tatarenko, S. ^{[2
]}

Kheng, K. ^{[1
]}

机构：

[1] CEA INAC SP2M, CEA CNRS, Grp Nanophys & Semicond, F-38054 Grenoble, France

[2] Univ Grenoble 1, CNRS, Inst Neel, F-38042 Grenoble, France

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 02期

关键词：

Single nanowire; Two-step process; CdSe; ZnSe; Single nanowire heterostructures; Single NW; Single QD; Single quantum dot; Polarisation; Antibunching; Correlation measurement; Micro photoluminescence; mu PL; Time-resolved photoluminescence; TRPL; PHOTOLUMINESCENCE; PHOTODETECTION;

D O I：

10.1016/j.mejo.2008.07.045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour-liquid-solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5 nm) defect-free ZnSe nanowire on top of a nanoneedle, where all defects are localised. The CdSe QDs are incorporated to the defect-free nanowires part. Owing to the extraction efficiency of the nanowires and the reduced number of stacking fault defects in the two-step-process nanowires, a very efficient photoluminescence is observed even on isolated single nanowire. Time-resolved photoluminescence and correlation photon give evidences that the bright photon emission is related to the CdSe QD. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：253 / 255

页数：3