ADVANCED GE-ON-SI TELECOMMUNICATION RECEIVERS

被引：0

作者：

Doerr, Christopher R. ^{[1
]}

机构：

[1] ACACIA COMMUN, Middletown, NJ USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

D O I：

10.1149/05009.0791ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ge can be deposited on Si to provide a photodetector at wavelengths where optical fiber has the lowest loss. These Ge-on-Si photodetectors can be used in Si photonic integrated circuits to make high-speed receivers and power monitors. We discuss the technology and give device examples.

引用

页码：791 / 794

页数：4

共 7 条

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