Effect of hydrogen on Pt/GaN Schottky diodes

被引：4

作者：

Irokawa, Yoshihiro ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 12期

关键词：

GaN; Schottky barrier diodes; Hydrogen; CAPACITANCE-VOLTAGE; INDUCED DEGRADATION; GAS SENSOR; DEVICES;

D O I：

10.35848/1347-4065/abc65f

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen on Pt/GaN Schottky diodes was studied using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I-V curves, 1/C-2-V curves, and Nyquist plots to the original values more rapidly than exposure to pure N-2, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.

引用

页数：5

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