A 2-GHz FBAR-Based Transformer Coupled Oscillator Design With Phase Noise Reduction

被引：20

作者：

Koo, Jabeom ^{[1
]}

Wang, Keping ^{[2
]}

Ruby, Richard ^{[3
]}

Otis, Brian P. ^{[4
]}

机构：

[1] Intel Corp, RFIC Grp, Hillsboro, OR 97124 USA

[2] Southeast Univ, Sch Informat Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China

[3] Broadcom Ltd, Dept FBAR & Orthogonal Markets, San Jose, CA 95131 USA

[4] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2019年 / 66卷 / 04期

关键词：

Oscillator; FBAR; phase noise; transformer; reference clock;

D O I：

10.1109/TCSII.2018.2867563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The oscillator architecture is proposed to reduce the close-in phase noise as well as power consumption. The proposed Colpitts oscillator removes the current source which is the main source of the 1/f noise conversion. The removal of the current source is compensated by using the transformer and cross-coupled capacitors. The 2-GHz film bulk acoustic resonator (FBAR) is used for the high Q frequency selective elements in the oscillator design. According to measurement results, this FBAR-based oscillator shows >= 10 dB reduction in close-in phase noise. Specifically, 12-dB lower phase noise is achieved at 100 Hz offset frequency. Measured power consumption is 350 uW, which is almost half of the conventional Colpitts oscillator using same FBAR device.

引用

页码：542 / 546

页数：5

共 8 条

[1] An Analysis of 1/f Noise to Phase Noise Conversion in CMOS Harmonic Oscillators [J].