Physical properties and diffusion characteristics of CVD-grown TiSiN films

被引：0

作者：

Anjum, D ^{[1
]}

Dovidenko, K ^{[1
]}

Oktyabrsky, S ^{[1
]}

Eisenbraun, E ^{[1
]}

Kaloyeros, AE ^{[1
]}

机构：

[1] SUNY Albany, Inst Mat, Albany, NY 12222 USA

来源：

SURFACE ENGINEERING 2001 - FUNDAMENTALS AND APPLICATIONS | 2001年 / 697卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using Til(4) + SiI4 + NH3 + H-2 chemistry at substrate temperature, 370 degreesC, and SiI4 to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 muOmega-cm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 rim-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550 degreesC. Breakdown of this diffusion barrier occurred at 600 C-degrees and was accompanied by the formation Of CU3Si protrusions at the TiSiN/Si interface.

引用

页码：341 / 346

页数：6

共 15 条

[1]

ANJUM D, 2001, EFFECT SILICON CONCE

[2] MULTICARRIER TRAPPING BY COPPER MICROPRECIPITATES IN SILICON [J].