UV enhanced white-light response based on p-Si/n-ZnO nanorod heterojunction photosensor

被引：10

作者：

Thongma, Sattra ^{[1
,2
]}

Tantisantisom, Kittipong ^{[3
]}

Grisdanurak, Nurak ^{[1
,2
]}

Boonkoom, Thitikorn ^{[3
]}

机构：

[1] Thammasat Univ, Dept Chem Engn, Fac Engn, Pathum Thani 12120, Thailand

[2] Thammasat Univ, Ctr Excellence Environm Catalysis & Adsorpt, Pathum Thani 12120, Thailand

[3] NSTDA, Natl Nanotechnol Ctr NANOTEC, Pathum Thani 12120, Thailand

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2019年 / 296卷

关键词：

ZnO nanorod; Hydrothermal synthesis; Photoresponse enhancement; Ultraviolet; White light; ULTRAVIOLET ELECTROLUMINESCENCE; PHOTORESPONSE; ZINC; PHOTODETECTORS; GROWTH; LAYER;

D O I：

10.1016/j.sna.2019.07.038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-regime photosensor has been fabricated from p-n junction between p-Si and n-ZnO nanorods. The junction is obtained by simply grown vertically-aligned ZnO nanorods on silicon substrate via hydrothermal method. As expected, the device response to visible and UV spectrum due to the band gap of silicon and ZnO, respectively. However, it is found that photoresponse to visible light can be enhanced under UV activation. Detailed mechanism behind the phenomena is proposed along with the photoluminescence results of defect states in ZnO nanorods. The trapped electrons from UV stimulation could be excited to conduction band by white light and contributed to the increase of the photocurrent of the device under white-light irradiation. This low-temperature solution growth ZnO nanorod-based UV-vis photosensor also presents reproducible results and fast recovery time. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：324 / 330

页数：7

共 34 条

[1] Hydrothermal zinc oxide nanowire growth using zinc acetate dihydrate salt [J].

Akgun, Mehmet Can ;

Kalay, Yunus Eren ;

Unalan, Husnu Emrah .

JOURNAL OF MATERIALS RESEARCH, 2012, 27 (11) :1445-1451

[2] Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation [J].

Bae, Heesun ;

Im, Seongil ;

Song, Jonghan .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (07) :5362-5364

[3] Spatially resolved photoresponse on individual ZnO nanorods: correlating morphology, defects and conductivity [J].

Bandopadhyay, K. ;

Mitra, J. .

SCIENTIFIC REPORTS, 2016, 6

[4] Photoconductive UV detectors on sol-gel-synthesized ZnO films [J].

Basak, D ;

Amin, G ;

Mallik, B ;

Paul, GK ;

Sen, SK .

JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) :73-77

[5] Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p-n Junctions [J].

Bie, Ya-Qing ;

Liao, Zhi-Min ;

Zhang, Hong-Zhou ;

Li, Guang-Ru ;

Ye, Yu ;

Zhou, Yang-Bo ;

Xu, Jun ;

Qin, Zhi-Xin ;

Dai, Lun ;

Yu, Da-Peng .

ADVANCED MATERIALS, 2011, 23 (05) :649-+

[6] Multifunctionality of Giant and Long-Lasting Persistent Photoconductivity: Semiconductor-Conductor Transition in Graphene Nanosheets and Amorphous InGaZnO Hybrids [J].

Dai, Min-Kun ;

Liou, Yi-Rou ;

Lian, Jan-Tien ;

Lin, Tai-Yuan ;

Chen, Yang-Fang .

ACS PHOTONICS, 2015, 2 (08) :1057-1064

[7] Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode [J].

Deng, R. ;

Yao, B. ;

Li, Y. F. ;

Xu, Y. ;

Li, J. C. ;

Li, B. H. ;

Zhang, Z. Z. ;

Zhang, L. G. ;

Zhao, H. F. ;

Shen, D. Z. .

JOURNAL OF LUMINESCENCE, 2013, 134 :240-243

[8] CONDUCTIVITY AND HALL EFFECT OF ZNO AT LOW TEMPERATURES [J].

HARRISON, SE .

PHYSICAL REVIEW, 1954, 93 (01) :52-62

[9] Inserting an i-ZnO layer to increase the performance of p-Si/n-ZnO heterojunction photodetectors [J].

Hwang, J. D. ;

Wu, D. H. ;

Hwang, S. B. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 :132-135

[10] Fundamentals of zinc oxide as a semiconductor [J].

Janotti, Anderson ;

Van de Walle, Chris G. .

REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (12)

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