Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

被引：16

作者：

Zhao, Jingtao ^{[1
]}

Lin, Zhaojun ^{[1
]}

Luan, Chongbiao ^{[1
]}

Zhou, Yang ^{[1
]}

Yang, Ming ^{[1
]}

Lv, Yuanjie ^{[2
]}

Feng, Zhihong ^{[2
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

基金：

中国国家自然科学基金;

关键词：

SCHOTTKY DIODES; ALGAN/GAN HEMT; GAN; SPECTROSCOPY; CONTACT; POWER;

D O I：

10.1063/1.4894093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with Ti/Al/Ni/Au gate electrodes using the measured capacitance-voltage, current-voltage characteristics, and micro-Raman spectroscopy. We found that the uneven distribution of the strain caused by the Schottky metals was a major factor that generates the polarization Coulomb field scattering in AlGaN/AlN/GaN HFETs, and after appropriate rapid thermal annealing (RTA) processes, the polarization Coulomb field scattering was greatly weakened and the two-dimensional electron gas electron mobility was improved. We also found that the Schottky barrier height and the DC characteristics of the devices became better after appropriate RTA. Of course, the electrical performances mentioned above became deteriorated after excessive annealing. (C) 2014 AIP Publishing LLC.

引用

页数：4

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