Carrier storage time of milliseconds at room temperature in self-organized quantum dots

被引：22

作者：

Marent, A.

Geller, M.

Bimberg, D.

Vasi'ev, A. P.

Semenova, E. S.

Zhukov, A. E.

Ustinov, V. M.

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

D O I：

10.1063/1.2337000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally activated hole emission from differently charged InAs/GaAs quantum dots (QDs) was investigated by using deep level transient spectroscopy. In a sample with an additional AlGaAs barrier below the QD layer, a thermal activation energy of 560 meV for hole emission from the QD ground states over the AlGaAs barrier is obtained. This large activation energy leads to a hole storage time at room temperature of about 5 ms, which is in the order of magnitude of a typical dynamic random access memory (DRAM) refresh time. (c) 2006 American Institute of Physics.

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页数：3

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