Annealing in water vapor as a new method for improvement of silicon thin film properties

被引：8
作者：
Honda, S.
Fejfar, A.
Kocka, J.
Yamazaki, T.
Ogane, A.
Uraoka, Y.
Fuyuki, T.
机构：
[1] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic
[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma, Nara 6300192, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期
关键词：
silicon; solar cells;
D O I：
10.1016/j.jnoncrysol.2006.01.061
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electronic properties of poly-Si thin films fabricated by atmospheric pressure chemical vapor deposition (APCVD) were improved by annealing in H2O or D2O vapors. Hall mobility was improved from 4.45 cm(-2)/V s to 25.1 cm(-2)/V s after 1 h D2O vapor treatment at 300 degrees C, i.e., nearly the same value as after optimized plasma hydrogenation. Unlike the hydrogen plasma treatment, annealing did not introduce disorder into the material, judged by the width of Raman LO-TO band. Water vapor treatment is a novel approach to improvement of thin films properties, with potentially low cost suitable for mass production of solar cells, but its mechanism is not yet clear. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：955 / 958
页数：4
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