Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

被引：12

作者：

Goelden, D. ^{[1
]}

Hildebrandt, E. ^{[1
]}

Alff, L. ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2017年 / 422卷

关键词：

Iron nitride; Molecular beam epitaxy; Thin films; Phase diagram; Nitrides; FeN; SINGLE-CRYSTAL FILMS; MAGNETIC-PROPERTIES; MOMENT; EPSILON-FE3N;

D O I：

10.1016/j.jmmm.2016.07.074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of alpha'-Fe8Nx, with increasing c/a-ratio and magnetic anisotropy with increasing x until almost phase pure alpha'-Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of alpha'-Fe8N (180 degrees C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 degrees C), phase pure gamma'-Fe4N is the most stable phase. (C)2016 Elsevier B.V. All rights reserved.

引用

页码：407 / 411

页数：5

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