SOI hall-sensor front end for energy measurement

被引:27
作者
Blagojevic, Marija [1 ]
Kayal, Maher
Gervais, Michel
De Venuto, Daniela
机构
[1] Ecole Polytech Fed Lausanne, LEG, ELB Ecublens, Dept Elect Engn,Engn Labs, CH-1015 Lausanne, Switzerland
[2] Giretis, F-47480 Bajamont, France
[3] Politecn Bari, Dipartimento Elettrotecn & Elettron, I-70125 Bari, Italy
关键词
Hall sensor; silicon-on-insulator (SOI); solid-state energy meter;
D O I
10.1109/JSEN.2006.877996
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The growing demand for the solid-state meters for power and energy measurement leads to the fully integrated Hall-sensor-based microsystem solutions. In this paper, a silicon-on-insulator (SOI) Hall-sensor-based. microsystem for energy measurements with dynamic offset cancellation was described. The Hall sensor is used to multiply the line voltage and the line current, giving an output voltage proportional to the instantaneous power. Furthermore, the voltage at the Hall output is proportional to the line active power and can be further processed. By converting the sensor output voltage to a digital signal using a delta-sigma (A E) modulator followed by a digital filtering, the energy consumption is observed at the end of the processing chain. The entire microsystem has been integrated in an experimental 0.5-mu m fully depleted SOT process and has a measured output error of less than +/- 1.5%.
引用
收藏
页码:1016 / 1021
页数:6
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