Investigation of the Meyer-Neldel Rule in Si MOSFETs

被引：0

作者：

Franchini, Giulio ^{[1
]}

Malavena, Gerardo ^{[1
]}

Compagnoni, Christian Monzio ^{[1
]}

Spinelli, Alessandro S. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 12期

关键词：

Manganese; Electrostatics; Data models; Silicon; MOSFET; Logic gates; Doping; Meyer-Neldel rule; semiconductor device modeling; activation energy; TEMPERATURE; MOBILITY; SUBTHRESHOLD; EXPLANATION; TRANSISTORS; ENERGY; STATES; MODEL;

D O I：

10.1109/LED.2020.3033583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in state-of-the-art monocrystalline Si MOSFETs. This unexpected result is explained via device simulation in terms of the self-consistency between the mobile charge and the device electrostatics. The dependence on device parameters is then discussed, showing that neglecting this effect can lead to interpretation errors for data evaluated at low activation energies.

引用

页码：1821 / 1824

页数：4

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