Study of carrier dynamics of vertically aligned InAs/GaAsSb quantum dot structures

被引：1
作者：
Liu, Wei-Sheng [1 ]
Wang, Yen-Ting [1 ]
Chang, Ching-Min [1 ]
Qiu, Wen-Yu [1 ]
Fang, Chi [1 ]
机构：
[1] Yuan Ze Univ, Dept Photon Engn, Chungli 32061, Taiwan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期
关键词：
quantum dot; type-II; antimony; vertically aligned; STRAIN-REDUCING LAYER; EMISSION; GAAS;
D O I：
10.1002/pssc.201300248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The carrier dynamics of vertically aligned InAs/GaAsSb Type-II quantum dot (QD) structure are comprehensively analyzed by time-resolved photoluminescence (TRPL) in this study. A columnar InAs QD structure with an overgrown layer of GaAsSb is proposed to enhance the thermal stability and carrier lifetime through the Type-II energy band alignment and carrier tunneling effect. The carrier lifetimes of columnar QD structures were correspondent with the PL spectra in wavelength-dependent TRPL measurements because of the electronic coupling effect and the dot-size dependent oscillator strength. The improved results in this work make columnar Type-II QDs the promising candidates for novel optoelectronic device application. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1489 / 1491
页数：3
相关论文
共 8 条
  • [1] 1.5 μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates
    Akahane, K
    Yamamoto, N
    Gozu, S
    Ueta, A
    Ohtani, N
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2) : 81 - 84
  • [2] Carrier dynamics of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer
    Chang, Wen-Hao
    Liao, Yu-An
    Hsu, Wei-Ting
    Lee, Ming-Chih
    Chiu, Pei-Chin
    Chyi, Jen-Inn
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [3] Effect of antimony on the density of InAs/Sb:GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition
    Guimard, Denis
    Nishioka, Masao
    Tsukamoto, Shiro
    Arakawa, Yasuhiko
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 298 (548-552) : 548 - 552
  • [4] Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
    Jin, C. Y.
    Liu, H. Y.
    Zhang, S. Y.
    Jiang, Q.
    Liew, S. L.
    Hopkinson, M.
    Badcock, T. J.
    Nabavi, E.
    Mowbray, D. J.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (02)
  • [5] Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
    Liu, HY
    Steer, MJ
    Badcock, TJ
    Mowbray, DJ
    Skolnick, MS
    Navaretti, P
    Groom, KM
    Hopkinson, M
    Hogg, RA
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
  • [6] Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure
    Liu, Wei-Sheng
    Wu, Hong-Ming
    Tsao, Fu-Hsiang
    Hsu, Tsan-Lin
    Chyi, Jen-Inn
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 105 : 237 - 241
  • [7] High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
    Liu, Wei-Sheng
    Wu, Hong-Ming
    Liao, Yu-Ann
    Chyi, Jen-Inn
    Chen, Wen-Yen
    Hsu, Tzu-Min
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 164 - 166
  • [8] Vertically aligned and electronically coupled growth induced InAs islands in GaAs
    Solomon, GS
    Trezza, JA
    Marshall, AF
    Harris, JS
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (06) : 952 - 955
1