Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl2/Ar-Based Inductively Coupled Plasma Dry Etching

被引：17

作者：

Dylewicz, R. ^{[1
,2
]}

Patela, S. ^{[1
]}

Hogg, R. A. ^{[3
]}

Fry, P. W. ^{[3
]}

Parbrook, P. J. ^{[3
]}

Airey, R. ^{[3
]}

Tahraoui, A. ^{[3
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, Photon Grp, PL-50370 Wroclaw, Poland

[2] Univ Glasgow, Dept Elect & Elect Engn, Optoelect Res Grp, Glasgow G12 8QQ, Lanark, Scotland

[3] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Dept Elect & Elect Engn, Sheffield, S Yorkshire, England

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 05期

关键词：

Gallium nitride; dry etching; inductively coupled plasma; periodic structure; grating coupler;

D O I：

10.1007/s11664-009-0731-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimized fabrication of submicron-sized features in gallium nitride (GaN) with the use of inductively coupled plasma (ICP) dry etching, based on SiCl4/Cl-2/Ar gas mixture, is presented. Dense periodic patterns, i.e., 400-nm-period gratings, were transferred into a gallium nitride waveguide under different etching conditions. ICP power, radiofrequency (RF) power, chamber pressure, and Ar/Cl-2 gas mixing ratio were altered during the experiment. Depths of fabricated grating couplers up to 670 nm were achieved. The most suitable etching conditions are discussed with the assessment based on etching selectivity, scanning electron microscopy (SEM) observation of grating tooth slope, hard-mask erosion process, and etched surface morphology.

引用

页码：635 / 639

页数：5