Low-voltage GaN:Er green electroluminescent devices

被引：33

作者：

Heikenfeld, J ^{[1
]}

Lee, DS ^{[1
]}

Garter, M ^{[1
]}

Birkhahn, R ^{[1
]}

Steckl, AJ ^{[1
]}

机构：

[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Green light emission has been measured from Er-doped GaN electroluminescent devices (ELDs) at an applied bias as low as 5 V. The GaN-Er ELDs were grown by solid source molecular beam epitaxy on Si (111) substrates. We have achieved this low-voltage operation (ten-fold reduction in optical turn-on voltage) by using heavily doped (similar to 0.01 Omega cm) Si substrates and by decreasing the GaN-Er layer thickness to several hundred nanometers. A simple device model is presented for the indium tin oxide/GaN-Er/Si/Al ELD. This work demonstrates the voltage excitation efficiency of Er3+ luminescent centers and the compatibility of GaN rare earth-doped ELDs with low-voltage drive circuitry. (C) 2000 American Institute of Physics. [S0003- 6951(00)01511-4].

引用

页码：1365 / 1367

页数：3

共 16 条

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