1.3-μm GaInNAs-AlGaAs distributed feedback lasers

被引：41

作者：

Reinhardt, M ^{[1
]}

Fischer, M ^{[1
]}

Kamp, M ^{[1
]}

Hofmann, J ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 03期

关键词：

distributed feedback (DFB) lasers; gain coupling; GaInNAs; optical fiber communications; semiconductor lasers;

D O I：

10.1109/68.826900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature continuous-wave operation of 1.3-mu m single-mode GaInNAs-AlGaAs distributed feedback (DFB)-lasers has been realized, The laser structure has been grown by solid source molecular beam epitaxy (MBE) using an electron cyclotron resonance plasma source for nitrogen activation (ECR-MBE). Laterally to the laser ridge a metal grating is patterned in order to obtain DFB, The evanescent field of the laser mode couples to the grating resulting in single-mode DFB emission. The continuous wave threshold currents are around 120 mA for a cavity with 800-mu m length and 2 mu m width, Monomode emission with side-mode suppression ratios of nearly 40 dB have been obtained.

引用

页码：239 / 241

页数：3

共 9 条

[1] Eisert D, 1996, APPL PHYS LETT, V68, P599, DOI 10.1063/1.116480
[2] Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers
Kamp, M
Hofmann, J
Forchel, A
Schäfer, F
Reithmaier, JP
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (04) : 483 - 485
[3] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
Kondow, M
Uomi, K
Niwa, A
Kitatani, T
Watahiki, S
Yazawa, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1273 - 1275
[4] KUEN S, 1995, IEEE PHOTONIC TECH L, V7, P1400
[5] 1.55 MU-M INDEX GAIN COUPLED DFB LASERS WITH STRAINED LAYER MULTIQUANTUM-WELL ACTIVE GRATING
LI, GP
MAKINO, T
MOORE, R
PUETZ, N
[J]. ELECTRONICS LETTERS, 1992, 28 (18) : 1726 - 1727
[6] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
Nakahara, K
Kondow, M
Kitatani, T
Larson, MC
Uomi, K
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) : 487 - 488
[7] FACET REFLECTION INDEPENDENT, SINGLE LONGITUDINAL MODE OSCILLATION IN A GAALAS/GAAS DISTRIBUTED FEEDBACK LASER EQUIPPED WITH A GAIN-COUPLING MECHANISM
NAKANO, Y
LUO, Y
TADA, K
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1606 - 1608
[8] 1.3 μm continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition
Sato, S
Satoh, S
[J]. ELECTRONICS LETTERS, 1999, 35 (15) : 1251 - 1252
[9] LONG-WAVELENGTH INGAASP/INP DISTRIBUTED FEEDBACK LASERS INCORPORATING GAIN-COUPLED MECHANISM
TSANG, WT
CHOA, FS
WU, MC
CHEN, YK
LOGAN, RA
SERGENT, AM
BURRUS, CA
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (03) : 212 - 215

← 1 →