Influence of laser parameters and unpumped regions near the facets on the power level for catastrophic optical damage in short wavelength lasers

被引：5
作者：
Hendrix, J
Morthier, G
Baets, R
机构：
[1] IMEC - University of Gent, Department of Information Technology (INTEC), B9000 Gent
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 1997年 / 144卷 / 02期
关键词：
double heterostructure laser diodes; catastrophic optical damage; laser parameters; short wavelength lasers;
D O I：
10.1049/ip-opt:19971091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A static model for facet heating and thermal runaway in double heterostructure laser diodes leading to catastrophic optical damage (COD) has been implemented. This model has been used to investigate the influence of unpumped facet regions. It has also been shown how optimisation of the device parameters can result in a higher COD power level. With the results of this analysis, the parameter-set of a laser emitting at 780 nm has been improved, resulting in a COD power level that is 1.5 times higher.
引用
收藏
页码：109 / 114
页数：6
相关论文
共 12 条
[1]  
ADAMS AR, 1995, P 7 EUR C INT OPT EC, P121
[2]   MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD [J].
BERTOLOTTI, M ;
LIAKHOU, G ;
LIVOTI, R ;
WANG, RP ;
SIBILIA, C ;
YAKOVLEV, VP .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) :7054-7060
[3]   NEW METHOD FOR THE STUDY OF MIRROR HEATING OF A SEMICONDUCTOR-LASER DIODE AND FOR THE DETERMINATION OF THERMAL-DIFFUSIVITY OF THE ENTIRE STRUCTURE [J].
BERTOLOTTI, M ;
LIAKHOU, GL ;
VOTI, RL ;
SIBILIA, C ;
SYRBU, A ;
WANG, RP .
APPLIED PHYSICS LETTERS, 1994, 65 (18) :2266-2268
[4]   FACET HEATING OF QUANTUM-WELL LASERS [J].
CHEN, G ;
TIEN, CL .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2167-2174
[5]   CATASTROPHIC DAMAGE OF ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL [J].
HENRY, CH ;
PETROFF, PM ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3721-3732
[6]   HIGH-POWER COD-FREE OPERATION OF 0.98-MU-M INGAAS/GAAS/INGAP LASERS WITH NONINJECTION REGIONS NEAR THE FACETS [J].
SAGAWA, M ;
HIRAMOTO, K ;
TOYONAKA, T ;
SHINODA, K ;
UOMI, K .
ELECTRONICS LETTERS, 1994, 30 (17) :1410-1411
[7]   STEADY-STATE MODEL FOR FACET HEATING LEADING TO THERMAL RUNAWAY IN SEMICONDUCTOR-LASERS [J].
SCHATZ, R ;
BETHEA, CG .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2509-2521
[8]  
SCHEMMANN MFC, 1994, THESIS TU EINDHOVEN
[9]   A NOVEL HIGH-POWER LASER STRUCTURE WITH CURRENT-BLOCKED REGIONS NEAR CAVITY FACETS [J].
SHIBUTANI, T ;
KUME, M ;
HAMADA, K ;
SHIMIZU, H ;
ITOH, K ;
KANO, G ;
TERAMOTO, I .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :760-764
[10]   HIGH-POWER 980NM NONABSORBING FACET LASERS [J].
UNGAR, JE ;
KWONG, NSK ;
OH, SW ;
CHEN, JS ;
BARCHAIM, N .
ELECTRONICS LETTERS, 1994, 30 (21) :1766-1767
12