Characterization of homoepitaxial β-Ga2O3 films prepared by metal-organic chemical vapor deposition

被引：57
作者：
Du, Xuejian [1 ]
Mi, Wei [1 ]
Luan, Caina [1 ]
Li, Zhao [1 ]
Xia, Changtai [2 ]
Ma, Jin [1 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 404卷
基金：
中国国家自然科学基金;
关键词：
X-ray diffraction; Metal-organic chemical vapor deposition; Oxides; Semiconducting materials; GALLIUM OXIDE NANOWIRES; ELECTRONIC-PROPERTIES; THIN-FILMS; GROWTH; FABRICATION; TRANSPORT; FIELD; ZNO;
D O I：
10.1016/j.jcrysgro.2014.07.011
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
beta-Ga2O3 films have been homoepitaxially deposited on beta-Ga2O3 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structure, Raman and optical properties of the homoepitaxial films have been studied. The structure of the obtained films is monoclinic beta phase gallium oxide and the film deposited at 650 degrees C exhibits the best crystalline quality. The average transmittance of the samples in the visible and UV wavelength range is about 80%. The optical band gap of the films deposited at 600, 650 and 700 degrees C are about 4.72, 4.73 and 4.68 eV. respectively. (C) 2014 Elsevier B.V. All rights reserved.
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页码：75 / 79
页数：5
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