High-performance short-gate InAIN/GaN heterostructure field-effect transistors

被引：25

作者：

Higashiwaki, Masataka

Mimura, Takashi

Matsui, Toshiaki

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 29-32期

关键词：

InAIN; GaN; heterostructure field-effect transistor (HFET); catalytic chemical vapor deposition (Cat-CVD); current-gain cutoff frequency (f(T)); maximum oscillation frequency (f(max));

D O I：

10.1143/JJAP.45.L843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated 60-nm-gate InAlN/GaN heterostructure field-effect transistors (HFETs), which had a 6-nm-thick InAlN barrier with an Al composition of 0.86. The devices had a maximum drain current density of 1.34 A/mm and a maximum extrinsic transconductance of 389 mS/mm. The small-signal performance of the devices shoved a current-gain cutoff frequency of 172 GHz and a maximum oscillation frequency of 206 GHz. These DC and RF device characteristics were superior to the best values reported for AlGaN (8nm)/GaN HFETs with the same gate length.

引用

页码：L843 / L845

页数：3

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