Electrical properties of p-type ZnTe thin films by immersion in Cu solution

被引：27
作者：
Lastra, G. [1 ]
Luque, P. A. [1 ]
Quevedo-Lopez, M. A. [2 ]
Olivas, A. [3 ]
机构：
[1] Ctr Nanociencias & Nanotechnol UNAM, PCelM, Ensenada 22860, Baja California, Mexico
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[3] Ctr Nanociencias & Nanotechnol UNAM, Ensenada 22860, Baja California, Mexico
来源：
MATERIALS LETTERS | 2014年 / 126卷
关键词：
ZnTe; Thin films; Cu doping; Thin-film transistor; ZINC TELLURIDE; DOPED ZNTE; DEPOSITION;
D O I：
10.1016/j.matlet.2014.04.058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnTe thin films were deposited on SiO2 substrate by pulsed-laser deposition (PLD) at room temperature. The ZnTe films were immersed in different concentrations of Cu(NO3)(2)-3H(2)O solutions for 1 min, then heated at 200 and 300 degrees C, both temperatures for 10 min in a N-2 atmosphere. The X-ray diffraction (XRD) showed the hexagonal and orthorhombic ZnTe phases when the copper-doped films were heated at 200 and 300 degrees C for 10 min respectively. The films immersed in 15 and 60 mg of Cu(NO3)(2)-H2O solutions had similar values of sheet resistance similar to 10(4) Omega/square, resistivity similar to 10(-1) Omega cm, specific contact resistance similar to 10(-4) Omega cm(2), and hall mobility 5 cm(2)/V s. Also, the copper-doped conditions were used to dope the source and drain bias to make a thin-film transistor of ZnTe (TFT) by photolithography. (C) 2014 Elsevier BM. All rights reserved.
引用
收藏
页码：271 / 273
页数：3
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