ELECTROMAGNETIC SIMULATION OF VLSI CIRCUITS BY THE MODIFIED ADI-FDTD METHOD

被引：0

作者：

Hwang, Jiunn-Nan ^{[1
]}

Chen, Fu-Chiarng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2014年 / 56卷 / 11期

关键词：

alternating-direction implicit; finite-difference time-domain; perfectly matched layer; modified conductivity profile; stability; PERFECTLY MATCHED LAYER; TIME-DOMAIN METHOD;

D O I：

10.1002/mop.28643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger's split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method. (C) 2014 Wiley Periodicals, Inc.

引用

页码：2530 / 2534

页数：6

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