Optical characterization of Si1-xCx/Si (0<=x<=0.014) semiconductor alloys - Reply

被引：0

作者：

Lee, H ^{[1
]}

机构：

[1] KYUNG HEE UNIV,IMST,SUWON 449701,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 11期

关键词：

spectroscopic ellipsometry; dielectric function; silicon; carbon; interference;

D O I：

10.1143/JJAP.35.5686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the previous comment by Zollner et al., we discuss the possibility that the double feature in the derivative spectra of the dielectric functions of Si1-xCx/Si (0 less than or equal to x less than or equal to 0.014) and Si0.924-xGe0.076Cx/Si (0 less than or equal to x less than or equal to 0.014) alloys grown using solid phase epitaxy may come from interference phenomenon. We emphasize that the argument does not change the main content of our previous reports.

引用

页码：5686 / 5686

页数：1

共 4 条

[1] OPTICAL CHARACTERIZATION OF SI1-XCX/SI(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.014) SEMICONDUCTOR ALLOYS
LEE, HS
KURTZ, SR
FLORO, JA
STRANE, J
SEAGER, CH
LEE, SR
JONES, ED
NELSON, JF
MAYER, T
PICRAUX, ST
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1340 - L1343
[2] Lee HS, 1995, MATER RES SOC SYMP P, V379, P211, DOI 10.1557/PROC-379-211
[3] PRECIPITATION AND RELAXATION IN STRAINED SI1-YCY/SI HETEROSTRUCTURES
STRANE, JW
STEIN, HJ
LEE, SR
PICRAUX, ST
WATANABE, JK
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3656 - 3668
[4] Optical characterization of Si1-xCx/Si (0<=x<=0.014) semiconductor alloys - Comment
Zollner, S
Junge, KE
Lange, R
Affolder, AA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11): : 5684 - 5685

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