Solution-processed indium-zinc-oxide thin-film transistors from a fast and stable pre-annealing process with a femtosecond laser

被引：0

作者：

Shan, Fei ^{[1
]}

Kim, Sung-Jin ^{[1
]}

Zhao, Yu ^{[2
]}

Kim, Nam ^{[2
]}

Choi, Seong Gon ^{[2
]}

Chang, Seung Wook ^{[3
]}

机构：

[1] Chungbuk Natl Univ, Coll Elect & Comp Engn, Cheongju 28644, South Korea

[2] Chungbuk Natl Univ, Dept Informat & Commun Engn, Cheongju 28644, South Korea

[3] Samsung Display Co Ltd, R&D Ctr, Yongin 17113, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2017年 / 70卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

IZO thin-film transistor; Femtosecond laser; Solution-processed; Pre-annealing; RESIDUAL-STRESS; SILICON; MOBILITY; GROWTH;

D O I：

10.3938/jkps.70.872

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A pre-annealing manufacturing process is applied to enhance the electrical characteristics of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). We show here a fast and stable pre-annealing process using a femtosecond laser to maintain electrical stability and improve electrical performance. Furthermore, the femtosecond-laser pre-annealing process is a fast preparation method that has greater flexibility and development space for semiconductor production activity. Pre-annealed IZO TFTs show a field-effect mobility of 3.75 cm(2)/Vs, an on-current/off-current (I (on) /I (off) ) ratio greater than 10(5), a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Moreover, the femtosecond laser pre-annealing, which provides better electrical stability in the solution-processed IZO TFTs, is discussed.

引用

页码：872 / 875

页数：4

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