Scanning force microscopy studies on the influence of oxygen concentration on the surface features of implanted and annealed silicon wafers

被引：0

作者：

Frank, S ^{[1
]}

Kessler, M ^{[1
]}

Lerch, W ^{[1
]}

Kreiser, U ^{[1
]}

Schmitz, B ^{[1
]}

机构：

[1] Inst Lasertechnol Med & Messtech ILM, Arbeitsgrp Lasermesstech, Ulm, Germany

来源：

PRECISION ENGINEERING, NANOTECHNOLOGY, VOL. 2 | 1999年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The SIA (Semiconductor Industries Association) roadmap requires continuously increasing wafer areas going along with a miniaturisation of feature structures. For this purpose, the control of ambient conditions (e.g., temperature, gas composition, pattern and surface roughness) becomes decisively important in a competitive market. This presentation focuses on the applicability and limitations of SFM-investigations on silicon wafer surfaces and explains the evaluation of the 3D-data set. Several conclusions for quality management of wafer processing may be assessed from SFM-investigations.

引用

页码：495 / 498

页数：4