Radiation Damage Study of a Silicon PIN Diode and Signal-to-Noise Ratio Measurement with a Proton Beam

被引：4

作者：

Kim, Y. I. ^{[1
]}

Hyun, H. J. ^{[1
]}

Kah, D. H. ^{[1
]}

Kang, Heedong ^{[1
]}

Kim, H. J. ^{[1
]}

Kim, H. O. ^{[1
]}

Park, H. ^{[1
]}

Kim, Kyeryung ^{[2
]}

机构：

[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea

[2] Korea Atom Energy Res Inst, Proton Engn Frontier Project, Taejon 305353, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 05期

关键词：

Proton beam; Silicon PIN diode; Radiation damage; Signal-to-noise ratio; STRIP SENSORS; FABRICATION;

D O I：

10.3938/jkps.54.2066

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We designed and fabricated silicon PIN diodes on a 5-in. high resistivity (>5 k Omega.cm), (100)-orientation, n-type 380 mu m-thick silicon wafer and developed a diode with an active area of 1.0 x 1.0 cm(2). The signal-to-noise ratio (SNR) of the PIN diode with the 45-MeV proton beam of the MC-50 cyclotron at the Korea Institute of Radiological and Medical Sciences (KIRAMS) was measured to be 20.8 after being corrected for the minimum ionizing particle. The silicon diode was also exposed to the proton beam for the radiation damage study. The leakage currents of the silicon diode as a function of the reverse bias voltage were measured with a picoammeter before and after the proton beam irradiation. In this paper, we present an explanation of the radiation-induced detector deterioration and the SNR. measurement for the manufactured silicon diode.

引用

页码：2066 / 2070

页数：5

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