Comparative Study of 3C-GaN Grown on Semi-insulating 3C-SiC/Si(100) Substrates

被引：7

作者：

Tschumak, Elena ^{[1
]}

Tonisch, Katja ^{[2
]}

Pezoldt, Joerg ^{[2
]}

As, Donat J. ^{[1
]}

机构：

[1] Univ Gesamthsch Paderborn, Fak Nat Wissensch, Dept Phys, D-33098 Paderborn, Germany

[2] TU Ilmenau, Inst Mikro & Nanotechnol, FG Nanotechnol, D-98684 Ilmenau, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

heteroepitaxy; 3C-GaN; HRXRD; silicon; MOLECULAR-BEAM EPITAXY; CUBIC GAN; LAYERS;

D O I：

10.4028/www.scientific.net/MSF.615-617.943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cubic gallium nitride epitaxial layers grown oil differently carbonized silicon Substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum call be achieved by using higher carbonization temperatures. The higher crystalline quality led to ail increase of the residual stress in the grown layer. Ail increase in the thickness of the Cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.

引用

页码：943 / 946

页数：4

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